Single N-Channel Power MOSFET featuring a 60V drain-source breakdown voltage and a continuous drain current of 9A. This MOSFET offers a low drain-source on-resistance of 122mΩ at a 10V gate-source voltage. Housed in a DPAK package, it operates across a wide temperature range from -55°C to 175°C and boasts a maximum power dissipation of 28.8W. Key switching characteristics include a turn-on delay time of 11.2ns and a fall time of 23ns. This component is RoHS compliant and halogen-free.
PackageDPAK
Current Rating9A
PolarityN-CHANNEL
Power28.8W
Quick Jump:
Technical Specifications
Onsemi NTD3055-150T4G technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 9A |
| Current Rating | 9A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 122mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 122MR |
| Element Configuration | Single |
| Fall Time | 23ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 2.38mm |
| Input Capacitance | 280pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 28.8W |
| Radiation Hardening | No |
| Rds On Max | 150mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 12.2ns |
| Turn-On Delay Time | 11.2ns |
| DC Rated Voltage | 60V |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTD3055-150T4G Datasheet
Download the complete datasheet for Onsemi NTD3055-150T4G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
