The NTD3055L170-1G is a single N-channel MOSFET with a drain to source breakdown voltage of 60V and a continuous drain current of 9A. It features a maximum power dissipation of 28.5W and a maximum operating temperature of 175°C. The device is packaged in a DPAK-3 case and is lead free and RoHS compliant. The NTD3055L170-1G has an input capacitance of 275pF and a nominal Vgs of 1.7V.
PackageDPAK
Current Rating9A
PolarityN-CHANNEL
Power28.5W
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Technical Specifications
Onsemi NTD3055L170-1G technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 9A |
| Current Rating | 9A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 170mR |
| Drain to Source Voltage (Vdss) | 60V |
| Element Configuration | Single |
| Fall Time | 38ns |
| Gate to Source Voltage (Vgs) | 15V |
| Input Capacitance | 275pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 28.5W |
| Nominal Vgs | 1.7V |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 28.5W |
| Rds On Max | 170mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 10ns |
| DC Rated Voltage | 60V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTD3055L170-1G Datasheet
Download the complete datasheet for Onsemi NTD3055L170-1G to view detailed technical specifications.
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