N-Channel Power MOSFET featuring 60V drain-source breakdown voltage and 32A continuous drain current. Surface-mount DPAK package with 26mΩ Rds On resistance. Operates from -55°C to 175°C with 93.75W maximum power dissipation. Includes 93ns fall time and 31ns turn-off delay.
Onsemi NTD32N06G technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 32A |
| Current Rating | 32A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 26mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 93ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.725nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 93.75W |
| Mount | Surface Mount |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 93.75W |
| Rds On Max | 26mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 2.8V |
| Turn-Off Delay Time | 31ns |
| DC Rated Voltage | 60V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NTD32N06G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.