N-Channel Power MOSFET featuring a 25V drain-source breakdown voltage and 45A continuous drain current. Offers a low 16.5mOhm Rds On (Max) and 12.6mR drain-source resistance. Designed for insertion mounting in a TO-251-3 (IPAK) package, this RoHS compliant component operates from -55°C to 175°C with a maximum power dissipation of 50W. Key switching characteristics include a 3.5ns fall time and 16.7ns turn-off delay time.
Onsemi NTD40N03R-1G technical specifications.
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 45A |
| Current Rating | 40A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 12.6mR |
| Drain to Source Voltage (Vdss) | 25V |
| Fall Time | 3.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 584pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Through Hole |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.1W |
| Rds On Max | 16.5mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 1.7V |
| Turn-Off Delay Time | 16.7ns |
| DC Rated Voltage | 25V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NTD40N03R-1G to view detailed technical specifications.
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