
Single N-Channel Power MOSFET, DPAK 4-lead surface mount package. Features 30V drain-source breakdown voltage, 68A continuous drain current, and 7.8mΩ maximum drain-source on-resistance at a nominal gate-source voltage of 1.9V. Operates from -55°C to 150°C with a maximum power dissipation of 75W. RoHS compliant and lead-free.
Onsemi NTD4302T4G technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 68A |
| Current Rating | 68A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 7.8mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 7.8MR |
| Element Configuration | Single |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.4nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.04W |
| Nominal Vgs | 1.9V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 75W |
| Radiation Hardening | No |
| Rds On Max | 10mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 1.9V |
| Turn-Off Delay Time | 40ns |
| DC Rated Voltage | 30V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NTD4302T4G to view detailed technical specifications.
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