The NTD4809NHT4G is a single N-channel MOSFET with a maximum drain to source breakdown voltage of 30V and a continuous drain current of 11.5A. It features a maximum drain to source resistance of 9mR and a maximum power dissipation of 52W. The device is packaged in a DPAK and is lead free and RoHS compliant. It operates over a temperature range of -55°C to 175°C and has a fall time of 3ns and a turn-off delay time of 22ns.
PackageDPAK
PolarityN-CHANNEL
Power2W
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Technical Specifications
Onsemi NTD4809NHT4G technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 11.5A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 9mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 9MR |
| Element Configuration | Single |
| Fall Time | 3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.155nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 52W |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 9mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 22ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTD4809NHT4G Datasheet
Download the complete datasheet for Onsemi NTD4809NHT4G to view detailed technical specifications.
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