The NTD4857NT4G is an N-Channel MOSFET from Onsemi with a maximum drain current of 78A and a drain to source breakdown voltage of 25V. It features a drain to source resistance of 5.7mR and a maximum power dissipation of 56.6W. The device is packaged in a lead-free DPAK-3 package and is suitable for surface mount applications. The NTD4857NT4G operates over a temperature range of -55°C to 175°C and is RoHS compliant.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power2.1W
Quick Jump:
Technical Specifications
Onsemi NTD4857NT4G technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 78A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 5.7mR |
| Drain to Source Voltage (Vdss) | 25V |
| Fall Time | 3.6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.96nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 56.6W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.1W |
| Rds On Max | 5.7mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 26ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTD4857NT4G Datasheet
Download the complete datasheet for Onsemi NTD4857NT4G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
