
The NTD4858NAT4G is a surface mount N-CHANNEL MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 54.5W and a continuous drain current of 73A. The device has a drain to source breakdown voltage of 25V and a drain to source resistance of 5.2mR. It is packaged in a DPAK case and is available in quantities of 2500 on tape and reel.
Onsemi NTD4858NAT4G technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 73A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 5.2mR |
| Drain to Source Voltage (Vdss) | 25V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.563nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 54.5W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 6.2mR |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NTD4858NAT4G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
