
Single N-Channel Power MOSFET featuring 25V drain-source breakdown voltage and 6.2mΩ drain-source on-resistance. This surface mount component, packaged in DPAK, offers a continuous drain current of 14A and a maximum power dissipation of 2W. Key electrical characteristics include a 1.563nF input capacitance and switching times of 12.6ns turn-on delay and 2.8ns fall time. Operating across a wide temperature range of -55°C to 175°C, this RoHS compliant device is supplied on a 2500-piece tape and reel.
Onsemi NTD4858NT4G technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 14A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 6.2mR |
| Drain to Source Voltage (Vdss) | 25V |
| Drain-source On Resistance-Max | 6.2MR |
| Element Configuration | Single |
| Fall Time | 2.8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.38mm |
| Input Capacitance | 1.563nF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.3W |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 6.2mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 23.8ns |
| Turn-On Delay Time | 12.6ns |
| Width | 6.22mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NTD4858NT4G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
