Quick Jump:
Technical Specifications
Onsemi NTD4970N-35G technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 11.6A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 21mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 5.7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 774pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.38W |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.55W |
| Radiation Hardening | No |
| Rds On Max | 11mR |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTD4970N-35G Datasheet
Download the complete datasheet for Onsemi NTD4970N-35G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.