Single N-Channel Power MOSFET featuring 40V drain-source breakdown voltage and 101A continuous drain current. This DPAK packaged component offers a low 4.4mΩ Rds On resistance and 93.75W maximum power dissipation. Key switching characteristics include an 8.5ns fall time, 14ns turn-on delay, and 39ns turn-off delay, with an input capacitance of 5.025nF. Operating across a wide temperature range of -55°C to 175°C, this RoHS compliant, lead-free component is supplied on a 2500-piece tape and reel.
PackageDPAK
PolarityN-CHANNEL
Power93.75W
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Technical Specifications
Onsemi NTD5802NT4G technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 101A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 6.5R |
| Drain to Source Voltage (Vdss) | 40V |
| Element Configuration | Single |
| Fall Time | 8.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.38mm |
| Input Capacitance | 5.025nF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 93.75W |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 93.75W |
| Radiation Hardening | No |
| Rds On Max | 4.4mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 39ns |
| Turn-On Delay Time | 14ns |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTD5802NT4G Datasheet
Download the complete datasheet for Onsemi NTD5802NT4G to view detailed technical specifications.
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