The NTD5803NT4G is a lead-free, N-channel MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 83W and a continuous drain current of 76A. The device features a drain to source breakdown voltage of 40V and a drain to source resistance of 7.2mR. It is packaged in a DPAK-3 package and is RoHS compliant.
PackageDPAK
PolarityN-CHANNEL
Power83W
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Technical Specifications
Onsemi NTD5803NT4G technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 76A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 7.2mR |
| Drain to Source Voltage (Vdss) | 40V |
| Element Configuration | Single |
| Fall Time | 6.6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.22nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83W |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 83W |
| Rds On Max | 7.2mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 28.3ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTD5803NT4G Datasheet
Download the complete datasheet for Onsemi NTD5803NT4G to view detailed technical specifications.
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