N-Channel Power MOSFET featuring 40V Drain to Source Breakdown Voltage and 33A Continuous Drain Current. Offers a low Drain-source On Resistance of 19 mOhm (max) and 12.7 mOhm (typical). This single element MOSFET is housed in a DPAK surface mount package, ideal for high-power applications with a maximum power dissipation of 40W. Operates across a wide temperature range from -55°C to 175°C and is RoHS compliant.
PackageDPAK
PolarityN-CHANNEL
Power40W
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Technical Specifications
Onsemi NTD5806NT4G technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 33A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 12.7mR |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 19MR |
| Element Configuration | Single |
| Fall Time | 2.6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.38mm |
| Input Capacitance | 860pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 40W |
| Radiation Hardening | No |
| Rds On Max | 19mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 14.2ns |
| Turn-On Delay Time | 10.6ns |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTD5806NT4G Datasheet
Download the complete datasheet for Onsemi NTD5806NT4G to view detailed technical specifications.
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