
Single N-Channel Logic Level Power MOSFET, 100V Drain to Source Breakdown Voltage, 23A Continuous Drain Current, and 52mΩ Drain to Source Resistance. Features a DPAK surface mount package with a maximum power dissipation of 83W and an operating temperature range of -55°C to 175°C. Includes fast switching characteristics with a 11ns turn-on delay and 40ns turn-off delay. This RoHS compliant component is supplied on tape and reel in quantities of 2500.
Onsemi NTD6415ANLT4G technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 23A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 52mR |
| Drain to Source Voltage (Vdss) | 100V |
| Element Configuration | Single |
| Fall Time | 71ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.38mm |
| Input Capacitance | 1.024nF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83W |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 83W |
| Radiation Hardening | No |
| Rds On Max | 52mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 11ns |
| Width | 6.22mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NTD6415ANLT4G to view detailed technical specifications.
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