Single N-Channel Power MOSFET featuring a 60V drain-source breakdown voltage and 3A continuous drain current. This component offers a low drain-source on-resistance of 100mΩ, with a maximum power dissipation of 2.1W. Packaged in a SOT-223-4 (TO-261) surface-mount case, it operates across a wide temperature range from -55°C to 175°C and is supplied on a 4000-piece tape and reel. Key switching characteristics include a 9.4ns turn-on delay and a 13ns fall time.
PackageSOT-223-4
Current Rating3A
PolarityN-CHANNEL
Power2.1W
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Technical Specifications
Onsemi NTF3055-100T3G technical specifications.
General
| Package/Case | SOT-223-4 |
| Continuous Drain Current (ID) | 3A |
| Current Rating | 3A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 110mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 100MR |
| Element Configuration | Single |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 455pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.3W |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.1W |
| Radiation Hardening | No |
| Rds On Max | 110mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 9.4ns |
| DC Rated Voltage | 60V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTF3055-100T3G Datasheet
Download the complete datasheet for Onsemi NTF3055-100T3G to view detailed technical specifications.
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