Single N-Channel Power MOSFET featuring 20V drain-source breakdown voltage and 5.6A continuous drain current. Achieves low on-resistance of 24mΩ at a 10V gate-source voltage. TSOP-6 package with 1.1W power dissipation, operating from -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 6.3ns and fall time of 7.3ns.
PackageTSOP
PolarityN-CHANNEL
Power1.1W
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Technical Specifications
Onsemi NTGS3130NT1G technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 5.6A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 24mR |
| Drain to Source Voltage (Vdss) | 20V |
| Element Configuration | Single |
| Fall Time | 7.3ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1mm |
| Input Capacitance | 935pF |
| Lead Free | Lead Free |
| Length | 3.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 600mW |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.1W |
| Radiation Hardening | No |
| Rds On Max | 24mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 21.7ns |
| Turn-On Delay Time | 6.3ns |
| Width | 1.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTGS3130NT1G Datasheet
Download the complete datasheet for Onsemi NTGS3130NT1G to view detailed technical specifications.
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