Single P-Channel MOSFET featuring a -12V drain-to-source breakdown voltage and 3.3A continuous drain current. This component offers a low 75mΩ drain-to-source resistance and a 2W power dissipation. Packaged in a TSOP with tape and reel packaging, it operates from -55°C to 150°C and is RoHS compliant. Key electrical characteristics include 550pF input capacitance and fast switching times with a 20ns turn-on delay.
PackageTSOP
Current Rating-3.3A
PolarityP-CHANNEL
Power2W
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Technical Specifications
Onsemi NTGS3433T1G technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 2.35A |
| Current Rating | -3.3A |
| Drain to Source Breakdown Voltage | -12V |
| Drain to Source Resistance | 75mR |
| Drain to Source Voltage (Vdss) | 12V |
| Element Configuration | Single |
| Fall Time | 100ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 550pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 75mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 110ns |
| Turn-On Delay Time | 20ns |
| DC Rated Voltage | -12V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTGS3433T1G Datasheet
Download the complete datasheet for Onsemi NTGS3433T1G to view detailed technical specifications.
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