The NTGS3455T1 is a P-CHANNEL JFET transistor with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 500mW and a maximum drain to source breakdown voltage of -30V. The transistor has a drain to source resistance of 100mR and a gate to source voltage of 20V. It is available in a TSOP-6 package and is not RoHS compliant.
Onsemi NTGS3455T1 technical specifications.
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 2.5A |
| Current Rating | -3.5A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 100mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 480pF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 100mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 20ns |
| DC Rated Voltage | -30V |
| RoHS | Not Compliant |
Download the complete datasheet for Onsemi NTGS3455T1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.