
Single P-Channel Power MOSFET featuring -30V drain-source breakdown voltage and a continuous drain current of 3.5A. Offers a low 100mΩ drain-source on-resistance. Packaged in a compact TSOP with dimensions of 3mm (L) x 1.5mm (W) x 0.94mm (H). Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2W. Includes fast switching characteristics with 10ns turn-on and fall times.
Onsemi NTGS3455T1G technical specifications.
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 3.5A |
| Current Rating | -3.5A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 100mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 100MR |
| Element Configuration | Single |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.94mm |
| Input Capacitance | 480pF |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Nominal Vgs | -1.87V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Polarization | P |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 100mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | -1.87V |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | -30V |
| Width | 1.5mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NTGS3455T1G to view detailed technical specifications.
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