Single N-Channel Power MOSFET featuring a 30V drain-source breakdown voltage and a continuous drain current of 7A. This component offers a low drain-source on-resistance of 25mΩ at a gate-source voltage of 10V. Designed with a TSOP package, it operates within a temperature range of -55°C to 150°C and boasts a maximum power dissipation of 1W. Key switching characteristics include a 6ns turn-on delay and a 4ns fall time, with an input capacitance of 560pF.
PackageTSOP
Current Rating5A
PolarityN-CHANNEL
Power1W
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Technical Specifications
Onsemi NTGS4141NT1G technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 7A |
| Current Rating | 5A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 30mR |
| Drain-source On Resistance-Max | 25mR |
| Element Configuration | Single |
| Fall Time | 4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 560pF |
| Lead Free | Lead Free |
| Length | 3.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Rds On Max | 25mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 6ns |
| DC Rated Voltage | 30V |
| Width | 1.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTGS4141NT1G Datasheet
Download the complete datasheet for Onsemi NTGS4141NT1G to view detailed technical specifications.
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