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Technical Specifications
Onsemi NTHC5513T1 technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 2.2A |
| Current Rating | 3.1A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 130mR |
| Drain to Source Voltage (Vdss) | 20V |
| Element Configuration | Dual |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 180pF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.1W |
| Rds On Max | 80mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 33ns |
| DC Rated Voltage | 20V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi NTHC5513T1 Datasheet
Download the complete datasheet for Onsemi NTHC5513T1 to view detailed technical specifications.
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