The NTHD5904NT3G is an N-CHANNEL JFET with a drain to source breakdown voltage of 20V and a continuous drain current of 2.5A. It has a drain to source resistance of 55mR and a maximum power dissipation of 640mW. The device is packaged in a small outline R-XDSO-C8 package and is suitable for surface mount applications. The operating temperature range is from -55°C to 150°C. The NTHD5904NT3G is RoHS compliant and lead free.
PackageSMD/SMT
Current Rating3.3A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi NTHD5904NT3G technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 2.5A |
| Current Rating | 3.3A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 55mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 465pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 640mW |
| Mount | Surface Mount |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.13W |
| Rds On Max | 65mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 17ns |
| DC Rated Voltage | 20V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTHD5904NT3G Datasheet
Download the complete datasheet for Onsemi NTHD5904NT3G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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