Single N-Channel Power MOSFET featuring a 30V drain-source breakdown voltage and 6.6A continuous drain current. This surface-mount device offers a low 22mΩ drain-to-source resistance (Rds On) and is packaged in a compact TO-252-3 (ChipFET) format. Ideal for power applications, it boasts fast switching characteristics with turn-on delay times of 12ns and fall times of 11ns. Operating across a wide temperature range from -55°C to 150°C, this RoHS compliant component is supplied on a 3000-piece tape and reel.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
Power1.5W
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Technical Specifications
Onsemi NTHS4166NT1G technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 6.6A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 22mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.1mm |
| Input Capacitance | 900pF |
| Lead Free | Lead Free |
| Length | 3.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 800mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.5W |
| Rds On Max | 22mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 12ns |
| Width | 1.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTHS4166NT1G Datasheet
Download the complete datasheet for Onsemi NTHS4166NT1G to view detailed technical specifications.
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