The NTHS5441PT1G is a surface mount N-channel enhancement mode MOSFET with a maximum operating temperature range of -55°C to 150°C. It has a maximum power dissipation of 1.3W and a maximum drain to source voltage of 20V. The device can handle a continuous drain current of 3.9A and has a maximum on-resistance of 46mR. The package is available in a tape and reel format with 3000 units per package.
PackageSMD/SMT
MountingSurface Mount
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Technical Specifications
Onsemi NTHS5441PT1G technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 3.9A |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance | 710pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.3W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Rds On Max | 46mR |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTHS5441PT1G Datasheet
Download the complete datasheet for Onsemi NTHS5441PT1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.