The NTHS5441T1 is a P-channel junction field-effect transistor with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a drain to source breakdown voltage of -20V and a power dissipation of 1.3W. The transistor is packaged in a SMALL OUTLINE, R-XDSO-C8 package and is available in quantities of 3000 per reel. The device is not RoHS compliant and contains lead. It has a drain to source resistance of 46mR and a fall time of 22ns.
Current Rating-3.9A
PolarityP-CHANNEL
Power1.3W
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Technical Specifications
Onsemi NTHS5441T1 technical specifications.
General
| Continuous Drain Current (ID) | -5.3A |
| Current Rating | -3.9A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 46mR |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 12V |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.3W |
| RoHS Compliant | No |
| Turn-Off Delay Time | 42ns |
| DC Rated Voltage | -20V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi NTHS5441T1 Datasheet
Download the complete datasheet for Onsemi NTHS5441T1 to view detailed technical specifications.
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