P-Channel Power MOSFET, designed for surface mount applications. Features a -20V drain-to-source breakdown voltage and a continuous drain current of 3.9A. Offers a low on-resistance of 46mΩ at a nominal Vgs of -1.2V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.3W. Packaged in a compact ChipFET SMD/SMT package, supplied on a 3000-piece tape and reel.
PackageSMD/SMT
Current Rating-3.9A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi NTHS5441T1G technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 3.9A |
| Current Rating | -3.9A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 46mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.1mm |
| Input Capacitance | 710pF |
| Lead Free | Lead Free |
| Length | 3.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.3W |
| Mount | Surface Mount |
| Nominal Vgs | -1.2V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.3W |
| Radiation Hardening | No |
| Rds On Max | 46mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 42ns |
| Turn-On Delay Time | 14ns |
| DC Rated Voltage | -20V |
| Width | 1.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTHS5441T1G Datasheet
Download the complete datasheet for Onsemi NTHS5441T1G to view detailed technical specifications.
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