Single P-Channel Power MOSFET, ChipFET package, designed for surface mount applications. Features a -20V drain-source breakdown voltage and a continuous drain current of 3.6A. Offers a low drain-source on-resistance of 56mΩ at a gate-source voltage of 12V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.3W. Includes fast switching characteristics with turn-on delay of 8.5ns and fall time of 14ns. RoHS compliant and lead-free.
PackageSMD/SMT
Current Rating-3.6A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi NTHS5443T1G technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 3.6A |
| Current Rating | -3.6A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 56mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.1mm |
| Lead Free | Lead Free |
| Length | 3.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.3W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.3W |
| Radiation Hardening | No |
| Rds On Max | 65mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 38ns |
| Turn-On Delay Time | 8.5ns |
| DC Rated Voltage | -20V |
| Width | 1.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTHS5443T1G Datasheet
Download the complete datasheet for Onsemi NTHS5443T1G to view detailed technical specifications.
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