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Technical Specifications
Onsemi NTJD4105CT4 technical specifications.
General
| Package/Case | SOT-363-6 |
| Continuous Drain Current (ID) | 775mA |
| Current Rating | 630mA |
| Drain to Source Breakdown Voltage | -8V |
| Drain to Source Resistance | 220mR |
| Drain to Source Voltage (Vdss) | 8V |
| Element Configuration | Dual |
| Fall Time | 36ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 46pF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 270mW |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 270mW |
| Rds On Max | 375mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 50ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi NTJD4105CT4 Datasheet
Download the complete datasheet for Onsemi NTJD4105CT4 to view detailed technical specifications.
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