Dual N and P-Channel JFET in a SOT-363-6 package. Features 20V Drain to Source Voltage (Vdss) and 880mA Continuous Drain Current (ID). Offers low Drain-source On Resistance-Max of 1.5R and a Gate to Source Voltage (Vgs) of 12V. Operates from -55°C to 150°C with a Max Power Dissipation of 270mW. Supplied on a 3000-reel tape and reel.
PackageSOT-363-6
Current Rating250mA
PolarityP-CHANNEL
Power270mW
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Technical Specifications
Onsemi NTJD4158CT1G technical specifications.
General
| Package/Case | SOT-363-6 |
| Continuous Drain Current (ID) | 880mA |
| Current Rating | 250mA |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 1R |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 1.5R |
| Element Configuration | Dual |
| Fall Time | 3.5ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1mm |
| Input Capacitance | 33pF |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 270mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 270mW |
| Radiation Hardening | No |
| Rds On Max | 1.5R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 1.2V |
| Turn-Off Delay Time | 13.5ns |
| Turn-On Delay Time | 15ns |
| Width | 1.35mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTJD4158CT1G Datasheet
Download the complete datasheet for Onsemi NTJD4158CT1G to view detailed technical specifications.
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