The NTJD4158CT2G is a dual P-channel JFET transistor with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 270mW and a continuous drain current of 880mA. The transistor is packaged in a SOT-363-6 package and is lead free and RoHS compliant. It has an input capacitance of 33pF and a fall time of 6.5ns.
PackageSOT-363-6
PolarityP-CHANNEL
Power270mW
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Technical Specifications
Onsemi NTJD4158CT2G technical specifications.
General
| Package/Case | SOT-363-6 |
| Continuous Drain Current (ID) | 880mA |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 215mR |
| Drain to Source Voltage (Vdss) | 20V |
| Element Configuration | Dual |
| Fall Time | 6.5ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 33pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 270mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 270mW |
| Rds On Max | 1.5R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 13.5ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTJD4158CT2G Datasheet
Download the complete datasheet for Onsemi NTJD4158CT2G to view detailed technical specifications.
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