Dual N-Channel Small Signal MOSFET, 20V Drain-Source Breakdown Voltage, 630mA Continuous Drain Current. Features a maximum Drain-Source On Resistance of 220mΩ and a typical 375mΩ Rds On. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 270mW. Packaged in a 6-lead SOT-363/SC-88/SC70-6 on a 3000-piece tape and reel. Includes ESD protection and is RoHS compliant.
PackageSOT-363-6
Current Rating630mA
PolarityN-CHANNEL
Power270mW
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Technical Specifications
Onsemi NTJD4401NT1G technical specifications.
General
| Package/Case | SOT-363-6 |
| Continuous Drain Current (ID) | 630mA |
| Current Rating | 630mA |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 510mR |
| Drain-source On Resistance-Max | 220mR |
| Element Configuration | Dual |
| Fall Time | 227ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 0.039inch |
| Input Capacitance | 46pF |
| Lead Free | Lead Free |
| Length | 0.086inch |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 270mW |
| Nominal Vgs | 920mV |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 270mW |
| Radiation Hardening | No |
| Rds On Max | 375mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 920mV |
| Turn-Off Delay Time | 786ns |
| Turn-On Delay Time | 83ns |
| DC Rated Voltage | 20V |
| Width | 0.053inch |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTJD4401NT1G Datasheet
Download the complete datasheet for Onsemi NTJD4401NT1G to view detailed technical specifications.
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