Single N-Channel Trench Power MOSFET featuring 20V drain-source breakdown voltage and 4.0A continuous drain current. Offers a low 60mΩ drain-source on-resistance at a nominal Vgs of 400mV. Packaged in a compact SOT-363-6 (SC-88/SC70-6) surface-mount package, this device operates from -55°C to 150°C with a maximum power dissipation of 1W. Ideal for power switching applications requiring efficient performance and a small footprint.
PackageSOT-363-6
Current Rating3.2A
PolarityN-CHANNEL
Power1W
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Technical Specifications
Onsemi NTJS3157NT1G technical specifications.
General
| Package/Case | SOT-363-6 |
| Continuous Drain Current (ID) | 3.2A |
| Current Rating | 3.2A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 70mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 45MR |
| Element Configuration | Single |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1mm |
| Input Capacitance | 500pF |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Nominal Vgs | 400mV |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Rds On Max | 60mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 6ns |
| DC Rated Voltage | 20V |
| Width | 1.35mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTJS3157NT1G Datasheet
Download the complete datasheet for Onsemi NTJS3157NT1G to view detailed technical specifications.
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