Onsemi
NTJS4160NT1G
Small Signal MOSFET 30V 3.2A 60 mOhm Single N-Channel SC−88/SC70−6/SOT−363, SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL
PackageSOT-363
MountingSurface Mount
PolarityN-CHANNEL
Power620mW
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Technical Specifications
Onsemi NTJS4160NT1G technical specifications.
General
| Package/Case | SOT-363 |
| Continuous Drain Current (ID) | 1.8A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 45mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 7.2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 230pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 620mW |
| Rds On Max | 60mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 10.9ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTJS4160NT1G Datasheet
Download the complete datasheet for Onsemi NTJS4160NT1G to view detailed technical specifications.
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