Single N-Channel Power MOSFET, SOT-723 package, featuring 20V drain-source breakdown voltage and 890mA continuous drain current. Offers a maximum drain-source on-resistance of 200mΩ. Operates within a temperature range of -55°C to 150°C with 310mW power dissipation. Includes ESD protection and is RoHS compliant.
PackageSOT-723-3
PolarityN-CHANNEL
Power310mW
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Technical Specifications
Onsemi NTK3134NT1G technical specifications.
General
Package/Case
SOT-723-3
Continuous Drain Current (ID)
890mA
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
200mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
200mR
Element Configuration
Single
Fall Time
4.8ns
Gate to Source Voltage (Vgs)
6V
Height
0.55mm
Input Capacitance
120pF
Lead Free
Lead Free
Length
1.25mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
310mW
Number of Elements
1
Package Quantity
4000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
310mW
Radiation Hardening
No
Rds On Max
350mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
1.2V
Turn-Off Delay Time
17.3ns
Turn-On Delay Time
6.7ns
Width
0.85mm
Compliance
RoHS
Compliant
Datasheet
Onsemi NTK3134NT1G Datasheet
Download the complete datasheet for Onsemi NTK3134NT1G to view detailed technical specifications.
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