Single P-Channel Power MOSFET with integrated Schottky diode, featuring a -20V drain-source breakdown voltage and a continuous drain current of 2.3A. This MOSFET offers a low Rds On of 140mΩ at a Vgs of 10V. Designed for efficient power switching, it exhibits fast switching characteristics with a turn-on delay of 6.2ns and a fall time of 22ns. The component is housed in a compact DFN 3x3x0.9mm package, supplied on tape and reel, and is RoHS compliant.
PackageDFN
Current Rating-3.9A
PolarityP-CHANNEL
Power1.6W
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Technical Specifications
Onsemi NTLGF3402PT2G technical specifications.
General
| Package/Case | DFN |
| Continuous Drain Current (ID) | 2.3A |
| Current Rating | -3.9A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 140mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 350pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.14W |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.6W |
| Radiation Hardening | No |
| Rds On Max | 140mR |
| RoHS Compliant | Yes |
| Series | FETKY™ |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 6.2ns |
| DC Rated Voltage | -20V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTLGF3402PT2G Datasheet
Download the complete datasheet for Onsemi NTLGF3402PT2G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.