The NTLJD2104PTBG is a P-channel junction field-effect transistor with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 2.4A and a drain to source breakdown voltage of -12V. The device is surface mountable and packaged in a WDFN6 package. It is compliant with RoHS regulations and has a maximum power dissipation of 700mW.
MountingSurface Mount
PolarityP-CHANNEL
Power2.3W
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Technical Specifications
Onsemi NTLJD2104PTBG technical specifications.
General
| Continuous Drain Current (ID) | 2.4A |
| Drain to Source Breakdown Voltage | -12V |
| Drain to Source Resistance | 90mR |
| Drain to Source Voltage (Vdss) | 12V |
| Fall Time | 16.2ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 467pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 700mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.3W |
| Rds On Max | 90mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 14ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTLJD2104PTBG Datasheet
Download the complete datasheet for Onsemi NTLJD2104PTBG to view detailed technical specifications.
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