The NTLJD3183CZTAG is a P-channel N-channel junction field-effect transistor with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 710mW and a maximum drain to source breakdown voltage of -20V. The device is lead free and RoHS compliant, making it suitable for use in a variety of applications. It features a small outline package type, S-PDSO-N6, and is available in a tape and reel packaging configuration with 3000 units per package.
MountingSurface Mount
PolarityP-CHANNEL
Power1.5W
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Technical Specifications
Onsemi NTLJD3183CZTAG technical specifications.
General
| Continuous Drain Current (ID) | 2.2A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 125mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 12.5ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 355pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 710mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.5W |
| Rds On Max | 68mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 14ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTLJD3183CZTAG Datasheet
Download the complete datasheet for Onsemi NTLJD3183CZTAG to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.