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Technical Specifications
Onsemi NTLJD3183CZTBG technical specifications.
General
| Continuous Drain Current (ID) | 2.2A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 100mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 12.5ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 355pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 710mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.5W |
| Rds On Max | 68mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 14ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTLJD3183CZTBG Datasheet
Download the complete datasheet for Onsemi NTLJD3183CZTBG to view detailed technical specifications.
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