N-channel enhancement mode power MOSFET, dual configuration, 30V drain-source voltage, 11A/13A continuous drain current. Features 17.4mOhm/13.3mOhm maximum drain-source resistance at 10V Vgs. Housed in an 8-pin WDFN EP surface-mount package (3x3x0.75mm) with 0.65mm pin pitch. Operates from -55°C to 150°C.
PackageWDFN EP
MountingSurface Mount
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Technical Specifications
Onsemi NTLLD4901NFTWG technical specifications.
General
| Basic Package Type | Non-Lead-Frame SMT |
| Package Family Name | DFN |
| Package/Case | WDFN EP |
| Lead Shape | No Lead |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 3 |
| Package Width (mm) | 3 |
| Package Height (mm) | 0.75(Max) |
| Seated Plane Height (mm) | 0.8(Max) |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Dual |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 11@Q 1|13@Q 2A |
| Maximum Gate Threshold Voltage | 2.2V |
| Maximum Drain Source Resistance | 17.4@10V@Q 1|13.3@10V@Q 2mOhm |
| Typical Gate Charge @ Vgs | 12@10V|[email protected]@Q 1|10.6@10V|[email protected]@Q 2nC |
| Typical Gate Charge @ 10V | 12@Q 1|10.6@Q 2nC |
| Typical Input Capacitance @ Vds | 605@15V@Q 1|660@15V@Q 2pF |
| Maximum Power Dissipation | 3230@Q 1|3270@Q 2mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 5V1P1 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Onsemi NTLLD4901NFTWG Datasheet
Download the complete datasheet for Onsemi NTLLD4901NFTWG to view detailed technical specifications.
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