The NTMD4884NFR2G is an N-CHANNEL junction field-effect transistor with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 3.3A and a drain to source breakdown voltage of 30V. The device is packaged in a lead-free SOIC-8 package and is RoHS compliant. It is suitable for surface mount applications and has a maximum power dissipation of 770mW.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power2.3W
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Technical Specifications
Onsemi NTMD4884NFR2G technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3.3A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 48mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 1.4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 360pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 770mW |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.3W |
| Rds On Max | 48mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 14ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTMD4884NFR2G Datasheet
Download the complete datasheet for Onsemi NTMD4884NFR2G to view detailed technical specifications.
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