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Technical Specifications
Onsemi NTMFS4833NST1G technical specifications.
General
| Package/Case | DFN |
| Continuous Drain Current (ID) | 26A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 2.2mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 44ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 5.25nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 86.2W |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.31W |
| Radiation Hardening | No |
| Rds On Max | 2.2mR |
| RoHS Compliant | Yes |
| Series | SENSEFET® |
| Turn-Off Delay Time | 37ns |
| Turn-On Delay Time | 21ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTMFS4833NST1G Datasheet
Download the complete datasheet for Onsemi NTMFS4833NST1G to view detailed technical specifications.
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