N-channel power MOSFET with 30V drain-source breakdown voltage and 7mΩ maximum drain-source on-resistance. Features 21.8A continuous drain current and 5.7W power dissipation. Surface mount DFN6 package with a height of 1.1mm, length of 5.1mm, and width of 6.1mm. Operates from -55°C to 150°C and is lead-free and RoHS compliant.
MountingSurface Mount
PolarityN-CHANNEL
Power5.7W
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Technical Specifications
Onsemi NTMFS4841NHT1G technical specifications.
General
| Continuous Drain Current (ID) | 21.8A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 7mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 2.9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.1mm |
| Input Capacitance | 2.113nF |
| Lead Free | Lead Free |
| Length | 5.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 870mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 5.7W |
| Radiation Hardening | No |
| Rds On Max | 7mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 21.9ns |
| Turn-On Delay Time | 12.1ns |
| Width | 6.1mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTMFS4841NHT1G Datasheet
Download the complete datasheet for Onsemi NTMFS4841NHT1G to view detailed technical specifications.
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