Quick Jump:
Technical Specifications
Onsemi NTMFS4854NST1G technical specifications.
General
| Package/Case | DFN |
| Continuous Drain Current (ID) | 24.4A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 2.5mR |
| Element Configuration | Single |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 4.83nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 86.2W |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.31W |
| Radiation Hardening | No |
| Rds On Max | 2.5mR |
| RoHS Compliant | Yes |
| Series | SENSEFET® |
| Turn-Off Delay Time | 38ns |
| Turn-On Delay Time | 20ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTMFS4854NST1G Datasheet
Download the complete datasheet for Onsemi NTMFS4854NST1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.