N-channel MOSFET with 30V drain-source breakdown voltage and 91A continuous drain current. Features low 3.3mΩ Rds On resistance and 4.8mΩ drain-source resistance. Operates within a temperature range of -40°C to 150°C with a maximum power dissipation of 48W. SOIC package, lead-free, and RoHS compliant.
PackageSOIC
PolarityN-CHANNEL
Power2.63W
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Technical Specifications
Onsemi NTMFS4923NET1G technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 91A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 4.8mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 6.6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.1mm |
| Input Capacitance | 4.85nF |
| Lead Free | Lead Free |
| Length | 5.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 48W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.63W |
| Radiation Hardening | No |
| Rds On Max | 3.3mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 1.63V |
| Turn-Off Delay Time | 27.5ns |
| Turn-On Delay Time | 16.3ns |
| Width | 6.1mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTMFS4923NET1G Datasheet
Download the complete datasheet for Onsemi NTMFS4923NET1G to view detailed technical specifications.
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