This 30V single junction field-effect transistor features a maximum continuous drain current of 48A and a maximum gate to source voltage of 20V. It is packaged in a halogen-free and RoHS compliant DFN5 package, suitable for use in high-temperature applications up to 150°C. The transistor is lead-free and RoHS compliant, making it suitable for use in a variety of applications.
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Technical Specifications
Onsemi NTMFS4925NET1G technical specifications.
General
| Package/Case | DFN |
| Continuous Drain Current (ID) | 48A |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.264nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 23.2W |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 6mR |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTMFS4925NET1G Datasheet
Download the complete datasheet for Onsemi NTMFS4925NET1G to view detailed technical specifications.
No datasheet is available for this part.