
Single N-Channel Power MOSFET featuring 30V drain-to-source breakdown voltage and 44A continuous drain current. Achieves low on-resistance of 7mΩ at a nominal Vgs of 1.6V. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 2.7W. This component offers fast switching speeds with turn-on delay of 8.6ns and fall time of 5.5ns. Packaged in a TO-252-3 (SO 8FL) surface-mount package, it is RoHS compliant.
Onsemi NTMFS4926NT1G technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 44A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 7mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 5.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.004nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 920mW |
| Nominal Vgs | 1.6V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.7W |
| Radiation Hardening | No |
| Rds On Max | 7mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 1.6V |
| Turn-Off Delay Time | 14.7ns |
| Turn-On Delay Time | 8.6ns |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NTMFS4926NT1G to view detailed technical specifications.
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