The NTMFS4H01NT1G is a surface mount N-channel MOSFET with a maximum drain to source voltage of 25V and continuous drain current of 334A. It features a maximum power dissipation of 125W and an on-resistance of 0.7mR. The device is packaged in a lead-free DFN package and is compliant with RoHS regulations. It is suitable for use in high-power applications where a low on-resistance is required.
PackageDFN
MountingSurface Mount
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Technical Specifications
Onsemi NTMFS4H01NT1G technical specifications.
General
| Package/Case | DFN |
| Continuous Drain Current (ID) | 334A |
| Drain to Source Voltage (Vdss) | 25V |
| Input Capacitance | 5.693nF |
| Lead Free | Lead Free |
| Max Power Dissipation | 125W |
| Mount | Surface Mount |
| Package Quantity | 1500 |
| Packaging | Tape and Reel |
| Rds On Max | 0.7mR |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTMFS4H01NT1G Datasheet
Download the complete datasheet for Onsemi NTMFS4H01NT1G to view detailed technical specifications.
No datasheet is available for this part.
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