This Onsemi N-Channel Power MOSFET features a maximum drain to source voltage of 25V and a continuous drain current of 193A. The device is packaged in a surface mount DFN package and is lead free and RoHS compliant. The maximum power dissipation is 83W, and the on-resistance is 1.4 milliohms. The input capacitance is 2.652 nanofarads.
PackageDFN
MountingSurface Mount
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Technical Specifications
Onsemi NTMFS4H02NFT3G technical specifications.
General
| Package/Case | DFN |
| Continuous Drain Current (ID) | 193A |
| Drain to Source Voltage (Vdss) | 25V |
| Input Capacitance | 2.652nF |
| Lead Free | Lead Free |
| Max Power Dissipation | 83W |
| Mount | Surface Mount |
| Rds On Max | 1.4mR |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTMFS4H02NFT3G Datasheet
Download the complete datasheet for Onsemi NTMFS4H02NFT3G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.