P-channel, single P-channel JFET with a -30V drain-to-source breakdown voltage and 30V drain-to-source voltage. Features a low 19mOhm drain-to-source resistance at 10V, 8.9A continuous drain current, and 2.5W power dissipation. Packaged in a narrow body SOIC package, this component offers fast switching with turn-on delay of 18ns and fall time of 36ns, operating from -55°C to 150°C. RoHS compliant and lead-free.
PackageSOIC
PolarityP-CHANNEL
Power2.5W
Quick Jump:
Technical Specifications
Onsemi NTMS4177PR2G technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 8.9A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 15mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 36ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 3.1nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 840mW |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 12mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | -2.5V |
| Turn-Off Delay Time | 64ns |
| Turn-On Delay Time | 18ns |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTMS4177PR2G Datasheet
Download the complete datasheet for Onsemi NTMS4177PR2G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
