The NTMS4802NR2G is an N-channel junction field-effect transistor with a maximum operating temperature range of -55°C to 150°C. It features a maximum power dissipation of 910mW and a maximum drain-to-source voltage of 30V. The device has a continuous drain current rating of 18A and a drain-to-source resistance of 4mR. It is packaged in a lead-free SOIC-8 package and is compliant with RoHS regulations.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Onsemi NTMS4802NR2G technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 18A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 4mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 4MR |
| Fall Time | 56ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 5.3nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 910mW |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 4mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 70ns |
| Turn-On Delay Time | 18ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTMS4802NR2G Datasheet
Download the complete datasheet for Onsemi NTMS4802NR2G to view detailed technical specifications.
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